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Lateral ReRAM (Resistive Random Access Memory) made of Cu/WOX/Cu was formed, and its operation was investigated in a transmission electron microscope (TEM) to elucidate the switching mechanism. Resistive switching behavior was realized in TEM. At the Set process changing the device state from high resistance state (HRS) to low resistance state (LRS), a Cu conductive filament grew up from the cathode...
A gate driver IC with programmable driving strength to reduce conducted electromagnetic interference (CEMI) in SMPS is presented in this paper. The solution presented is to dynamically adjust the gate driving strength (output resistance Rout) at the arrival of each gate pulse to minimize CEMI while maintaining low switching loss. Dynamically adjusting Rout is not possible with conventional gate driver...
This paper investigates the possibility of using adiabatic logic as a countermeasure against power analysis attacks. As the examples of adiabatic logic styles, we evaluate single- and dual-rail gates that are driven a single sinusoidal power clock. From simulation results, we conclude that adiabatic logic countermeasures, such as the single-rail logics, seem to be promising candidates, because they...
New IGBT modules to realize advanced neutral-point-clamped (A-NPC) 3-level power converters have been developed for the first time. The power loss of the IGBT modules developed is minimized by using 6th generation IGBT and FWD and 2nd generation RB-IGBT dies, the stray inductance between each pair of main terminal is as low as 40nH, and the arrangement of the terminals are optimized for constructing...
Ferroelectric switching characteristics during continuous polarization reversal were investigated in thin vinylidene fluoride/trifluoroethylene copolymer films by using a train of bipolar on-off electric field pulses. It was found that polarization reversal is accelerated as the pulse width Δt is decreased whereas it is decelerated as Δt is increased. For a given Δt, the switching time ts depends...
Polarization reversal in a ferroelectric is accompanied by heat generation which causes a temperature rise depending on thermal boundary conditions. An adiabatic condition yields (E: electric field, D: electric displacement, C: heat capacity). The copolymer of vinylidene fluoride (VDF) and trifluoroethylene (TrFE) copolymer is expected to generate a large amount of heat because of its large remanent...
In this paper, we use mica for clay and report on a finding of very large remanent polarization in the PVDF/mica nanocomposites prepared by melt crystallization and solvent casting.
The copolymer of vinylidene fluoride (VDF) with trifluoroethylene (TrFE) has attracted much interest due to the potential use in nonvolatile memory devices with easy formability. A repetitive application of electric stress causes a decrease of switchable polarization. This phenomenon, referred to as fatigue, is one of the primary sources of concern in the ferroelectric memory devices. Having realized...
Piezoelectric response force microscopy, PFM, is a kind of SPM technique. It measures the change of the position of surface in accordance with the applied voltage, giving local piezoelectric activity. This method is widely applied to ferroelectric ceramics as well as to ferroelectric polymers. We used this method to study the dynamics of polarization reversal in thin films of VDF/TrFE copolymer.
The copolymer of vinylidene fluoride (VDF) with trifluoroethylene (TrFE) is a ferroelectric polymer undergoing polarization reversal as a result of rotational motions of molecules about their chain axes. It requires a very high electric field of approximately 100 MV/m for polarization reversal. Therefore, the thickness reduction below 50 nm is a technological requirement to achieve low-voltage operations...
Ferroelectric switching characteristics in vinylidene fluoride (VDF)/trifluoroethylene (TrFE) copolymer films have been shown to depend to a variety of factors not only the electric field E and temperature but also film thickness and previous poling conditions. Polarization reversal is believed to progress via nucleation-growth mechanism. However, there remains uncertainty about its microscopic features...
A metal-ferroelectrics-semiconductor (MFS) capacitor with a ferroelectric polymer as a gate dielectric has recently attracted much interest owing to its potential applications in nonvolatile memory. In order to understand switching dynamics, we performed simultaneous measurements of the charge Q and the capacitance C for Au/vinylidene fluoride- trifluoroethylene (VDF-TrFE) /n-Si structure using a...
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