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We designed and fabricated the AlGaN/GaN HFETs with step graded heterostructure in this work. Compared with the AlGaN/GaN HFETs with linearly graded layer, the AlGaN/GaN HFETs with step graded layer exhibited similar device performance, including the notable wide flat transconductance characteristics. For the AlGaN/GaN step graded heterostructure, each step layer is individual and can be controlled...
A dedicated readout ASIC has been developed for a TPC based X-ray polarimeter. It consists of a charge sensitive preamplifier, a CR-RC shaper and a 64-cell switched capacitor array (SCA) for each channel. The signal charge distribution along the time axis can be extracted from the recorded waveforms. The first prototype has been implemented in two separate chips: the front-end part and the SCA part...
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