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In this study, ZnAl2O4 (ZAO) films having a thickness of 20.1nm, which serve as the resistive switching layer in random access memory (RRAM) devices based on a Pt/ZAO/Pt structure, were prepared using radio frequency magnetron sputtering. The as-deposited film appeared to be amorphous with distributed nano-crystalline ZnAl2O4 particles, while the ZAO film annealed at 450°C was composed of cubic ZnAl...
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