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Forming-free unipolar resistive switching with good retention time, low voltage (<1.9 V) and thin thickness (∼11 nm) is obtained in oxygen deficient Pt/ZrCuOy/Pt devices. Annealing at 150 °C is beneficial to improve the endurance from 286 to >6 × 103 and the resistance ratio from ∼13 to ∼25. Nanoscale current path images observed using a conductive atomic force microscope reveal a current density...
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