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Gallium sulphide (GaS) is a layer structure semiconductor with relatively wide energy gap (Eg (295K)=2.5eV and Eg (80K)=2.62eV). It has potential applications in some areas of optoelectronics. This paper presents the investigations of the influence of light intensity on surface recombination velocity of charge carriers in GaS single crystals. To attain this purpose spectral dependences (between 420...
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