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A blue photoluminescence band centered at 440 nm was observed from Si-Ge-SiO 2 co-sputtered films at room temperature. This band gains intensity after the film was annealed at a temperature around 900°C in N 2 atmosphere. From analysis of photoluminescence excitation, Raman and X-ray photoelectron spectra, it turns out that the luminescence is probably from some interfacial state...
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