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This work presents experimental demonstration of InAs single and dual quantum well (DQW) heterostructure FinFETs (FF) and their superior performance over In0.7Ga0.3As QW FF. Peak mobility of 3,531 cm2/V-sec and 3,950 cm2/V-sec are obtained for InAs single QW FF and InAs DQW FF, respectively, at a fin width (Wfin) of 40nm and LG = 2µm. Peak gm of 480 µS/µm, 541 µS/um; IDSAT of 121 µA/µm, 135 µA/µm;...
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