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BGaAs epitaxial layers were grown by metalorganic vapour phase epitaxy (MOVPE) on (100) GaAs vicinal substrates using diborane, triethylgallium and arsine as precursors. For growth temperatures of 580 and 610 °C, we studied the boron incorporation in the epilayers, their boron surface composition and their growth mode as a function of the diborane flow-rate, using respectively X-ray diffraction, X-ray...
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