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Optical gain properties of InGaN quantum wells on ternary substrates are analyzed for visible lasers. Larger optical gains are obtained by employing ternary substrates, which indicate its potential for green-emitting diode lasers.
The limitations and novel designs of InGaN and AlGaN quantum wells for visible and ultraviolet lasers are investigated. Specific designs with large optical gain are compared for visible and ultraviolet lasers.
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