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Cu2ZnSiS4 thin film has been synthesized using co-sputtering technique followed by sulphurization at 800°C for 20min. The relatively lower time of sulphurization employed are advantageous over earlier reported work in which the same material has been prepared in bulk form with a sulphurization time of ~ 24h. The structural, optical and electrical properties of Cu2ZnSiS4 have been studied using macroscopic...
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