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V-shaped grooves were prepared by patterning of line and space (LS) using photolithography and Reactive Ion Etching (RIE), and anisotropic etching using hot KOH solution on the patterned 100 nm- SiO 2 /Si(001) substrate. The V-shaped grooves consist of two 〈111〉 planes. The width of grooves was varied from 1 to 10 μm while keeping intervals (line-shaped spaces) between the grooves. The InSb...
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