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In this paper, a generalized analysis of Asymmetrically-Recessed Double Gate High Electron Mobility Transistor (DGHEMT) to realize high breakdown voltage is carried out. As with aggressive scaling in FETs the short-channel effects like Vth roll-off, degradation in cut-off frequency, transconductance etc becomes unavoidable at nanometer gate-length. Recently, DGHEMT has been proposed by Wichmann et...
The aim of this paper is to investigate the impact of gate-length (Lg) and doping concentration (Nd) of the donor layer and its thickness (da) on the performance of double-gate (DG) InAlAs/InGaAs/InP HEMT. A comparison of the impact of donor-layer doping concentration, donor-layer thickness and gate-length on the channel current, transconductance, gate-to-source capacitance and cut-off frequency for...
We report high temperature microwave characteristics of AlGaN/GaN MISHFET and present comparative studies of this device with regular HFET structures. The effect of various temperature dependent material parameters are taken into account to evaluate the small signal parameters for wide temperature (25degC < T < 300degC) range. The effect of piezoelectric and spontaneous polarization has also...
The study thus proves that DMG AlGaN/GaN HEMT is a potential candidate for growing requirement of high linearity and low distortion in the telecommunication industry due to reduced SCEs and a more uniform electric field distribution. The study also shows that the linearity performance improves further on using lower doping and thickness of the barrier layer and increased metal gate workfunction difference;...
The capacitance-voltage(C-V) and switching characteristics of AlGaN/GaN HEMT has been calculated analytically. The device capacitances and switching parameters, which have been calculated, depends on the basic device parameters and terminal voltages which determine the microwave behavior of a device. The nonvariant nature of this device with drain voltage leads to better device choice for high power...
An analytical thermal model of AlGaN/GaN high electron mobility transistor (HEMTs) has been developed. This temperature dependent model incorporates the polarization effects at heterointerface. The model also accounts for the mobility degradation with increase in temperature, which is one of the major causes in deteriorating the driving current. By using the variation of band gap with temperature,...
In this paper, the RF performance of dual material gate (DMG) AlGaN/GaN HEMT is investigated using ATLAS device simulator and presented as a high performance RF solution to microwave applications. Simulations result reveal improved RF characteristics of DMG AlGaN/GaN HEMT in comparison to Single Material Gate (SMG) AlGaN/GaN HEMT in terms of higher cut-off frequency, current gain and reduced parasitic...
In recent years, double gate high electron mobility transistor (DGHEMT) have been introduced to provide better immunity to short channel effects which are inescapable with downscaling of the single gate devices due to fundamental limit on gate-to-channel thickness. Furthermore, in sub 100 nm regime, for lower device aspect ratio, channel thickness also becomes an important parameter affecting the...
The objective of this paper is to investigate and explore the potential of AlGaN/GaN based metal insulator semiconductor heterostructure field effect transistor (MISHFET) device for high temperature applications. A temperature dependent analytical model is proposed taking into account the effect of various temperature dependent material properties. The electrical characteristics like drain current,...
In this paper, we present a simple 2- dimensional analytical model for exploring the novel features of the dual material gate (DMG) high electron mobility transistor (HEMT) for reduced short channel effects (SCE). The model accurately predicts the channel potential and electric field for single material gate (SMG) and DMG structures. It is seen that the work function difference of the two metal gates...
An analytical drain current model of a novel device architecture- AlGaN/GaN Metal Insulator Semiconductor Heterostructure Field Effect Transistor (MISHFET) has been presented to assess the microwave performance of the device for sub micron gate lengths. The model has a broad utility as it is equally applicable to HFETs as well. Both the structures have been extensively studied and a comparison is...
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