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While depositing of a-Si:H thin films in PECVD technique, crystalline volume fraction (X/sub c/) is commonly modified by varying hydrogen dilution. In this paper the modulation effect of plasma power on X/sub c/ of films in the phase transition from a-Si:H to (/spl mu/c-Si:H, deposited by VHF-PECVD method, has been investigated. It is found that at appropriate hydrogen dilution (R=H/sub 2//SiH/sub...
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