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Thin films of aluminium metal with varying thickness between 10 and 200nm were grown on (111) Si substrates at 250°C under UHV conditions using molecular beam epitaxy (MBE). Grown thin films were characterized by in situ X-ray photoelectron spectroscopy, and ex situ X-ray diffraction, atomic force microscopy and temperature-dependent electrical resisitivity measurements. The results showed that (i)...
The Ag/Al bilayer-structures consisting of 10nm Al and 100nm Ag have been grown on (111) Si substrates using molecular beam epitaxy (MBE). The bilayer-structures were annealed in situ under a vacuum of 10 −8 Torr at different temperatures between 25 and 800°C for a fixed period of 30min and, characterized by in situ X-ray photoelectron spectroscopy (XPS) and ex situ X-ray diffraction (XRD),...
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