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Electrostatic discharge robustness of promising nano-devices, the gate-all-around nanowire field-effect transistor and double-gated poly-Si nanowire thin-film transistor, were characterized and compared with FinFETs for the first time using the transmission line pulsing (TLP) technique. Failure analysis of the devices was done by electrical characterization and microscopy inspection.
Electrostatic discharge (ESD) robustness of a promising nanoscaled device, the gate-all-around nanowire field-effect transistor (NW FET), was characterized for the first time using the transmission-line pulsing technique. The effects of gate length, nanowire dimension, and nanowire count on the failure current, leakage current, trigger voltage, and on-resistance were investigated. ESD performances...
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