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In this study, indium–zinc oxide (IZO) thin films have been prepared at a room temperature, 200 and 300 °C by radio frequency magnetron sputtering from a In 2 O 3 –12 wt.% ZnO sintered ceramic target, and their dependence of electrical and structural properties on the oxygen content in sputter gas, the substrate temperature and the post-heat treatment was investigated. X-ray diffraction...
To improve the stability of sputter-deposited ZnO:Al (AZO) films at high temperature above 300∘C, an amorphous Zn-Sn-O (ZTO) film was deposited on the top of AZO films as an protective layer by co-sputtering of pure ZnO and SnO2 targets. Amorphous ZTO films had resistivity in the range from 10−2 to 10−3 Ωcm and were stable up to temperature of 400∘C. Heat treatments of bare AZO films in the atmosphere...
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