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U2N3+xOy films were deposited on Si substrate by magnetic sputtering deposition method, and the oxidation behavior of U2N3+xOy films in air and oxygen atmosphere were investigated by X-ray photoelectron spectroscopy (XPS) at room temperature. During oxidation, U4f peaks gradually shift to higher binding energy accompanied with variations of satellites at 386.6eV and 397.7eV in U4f region. And similar...
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