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Incorporated with the annealing-induced source/drain (S/D), elevated-metal metal-oxide (EMMO) thin-film transistor (TFT) was proposed to provide an etch-stop (ES) layer while retain a small device size for high-resolution displays, which could not be combined in conventional TFT architectures. The “defect-populated” S/D and “defect-free” channel enabled the high performance metrics: a competitive...
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