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Heterogeneous complementary inverters composed of bi-layer molybdenum disulfide (MoS2) and single-walled carbon-nanotube (SWCNT) networks are designed, and n-type MoS2/p-type SWCNT inverters are fabricated with a backgated structure. Field-effect transistors (FETs) based on the MoS2 and SWCNT networks show high electrical performance with large ON/OFF ratios up to 106 and 105 for MoS2 and SWCNT, respectively...
In this article, we report a Field Effect Transistor (FET) with Aluminum doped graphene channel. The graphene is doped by spin coating a chemical dopant solution which tailored the electrical properties of graphene, such as transfer characteristics and output characteristics. The Doping of graphene was successfully verified by X-Ray photoelectron spectra (XPS) measurements. The testing results showed...
ZnO thin film transistors (TFTs) on SiO 2 /Si substrate were fabricated with the channel thickness ranging from 30nm to 90nm. It was found that the performances of ZnO TFTs greatly depended on the thickness of ZnO channel layer. As the thickness increased, the electrical characteristic curves gradually became neither able to be cut off nor saturated. The observed changes were explained from...
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