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Soft magnetic amorphous film not only has the giant magneto-impedance (GMI) effect, but also significantly affected by stress-induced magnetic anisotropy[1].
Inherent cell variation of phase change memory is difficult to control by material or device engineering alone. We previously reported R-I curve shift detection scheme as a good method for monitoring PCM cell characteristics. This paper extends that concept and proposes a Stress-trim procedure to tighten R-I characteristics for PCM MLC operation. By leveraging the right-shift phenomena of PCM R-I...
Z-slots are presumed to offer a structural advantage over conventional inclined slots for narrow wall slotted waveguide antennas, in that the corners of the rectangular waveguide are not cut and consequently will not weaken a structural tube as much. Initial structural simulations are shown to confirm this assumption. This slot configuration was also further investigated as radiating slots in standing...
Conventional phase change memory (PCM) stores information in amorphous/crystalline states that can be read out as HRS/LRS. In this work we report a radically different mode of storage that can concurrently and independently work with the conventional storage mode. By stressing the memory cell with current we can shift the threshold for RESET switching, and the resulting R-I curve can be used to store...
For the first time, we report high performance hybrid channel ETSOI CMOS by integrating strained SiGe-channel (cSiGe) PFET with Si-channel NFET at 22nm groundrules. We demonstrate a record high speed ring oscillator (fan-out = 3) with delay of 8.5 ps/stage and 11.2 ps/stage at VDD = 0.9V and VDD = 0.7V, respectively, outperforming state-of-the-art finFET results. A novel “STI-last” integration scheme...
In this paper, we report the results of extensive RTN trap analysis in high-k / metal-gate pFETs with respect to the response of >1400 traps to gate voltage, and discuss, for the first time, the impact of these results on understanding BTI stress and recovery effects. Our results suggest that the statistical variation in BTI effects in scaled devices may become very large because of the wide range...
We present a new ETSOI CMOS integration scheme. The new process flow incorporates all benefits from our previous unipolar work. Only a single mask level is required to form raised source/drain (RSD) and extensions for both NFET and PFET. Another new feature of this work is the incorporation of two strain techniques to boost performance, (1) Si:C RSD for NFET and SiGe RSD for PFET, and (2) enhanced...
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