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A study of Ge epilayer growth directly on a Si(001) substrate is presented, following the two temperature Ge layer method. In an attempt to minimize the overall thickness while maintaining a good quality Ge epilayer, we have investigated the effect of varying the thickness of both the low and high temperature Ge layers, grown at 400°C and 670°C, respectively, by reduced pressure chemical vapor deposition...
After a long period of developing integrated circuit technology through simple scaling of silicon devices, the semiconductor industry is now embracing technology boosters such as strain for higher mobility channel material. Germanium is the logical supplement to enhance existing technologies, as its material behaviour is very close to silicon, and to create new functional devices that cannot be fabricated...
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