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Due to their higher resistance, single layer graphene nanoribbons (GNRs) are not suitable for high-speed on-chip interconnect applications. Hence, we use multilayer GNRs (MLGNRs) that offer multiple conduction channels and lower resistance. However, MLGNRs turn into graphite as the number of layers increase, which reduces the mean-free path of each layer. Insertion of a dielectric between GNR layers...
In this paper, we propose a novel Vertical-Slit Field Effect Transistor (VeSFET) with high-k gate dielectrics and metallic gates with different work function (Φm). The gate dielectric material and gate electrodes in traditional VeSFETs are replaced by high-k dielectrics and metals, respectively. We investigate the effect of these on the electrical characteristics of our proposed device. Various performance...
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