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This work presents a 5-GHz power amplifier (PA) based on a tsmc™ 0.35-µm SiGe heterojunction bipolar transistor (HBT) process. The PA adopts an on-chip linearizer as a feedforward element that cancels third-order distortion at the PA output. The PA achieves an output 1-dB compression point (OP1dB) of 27 dBm, a power gain of 21.9 dB, and a power added efficiency of 31 %. Compared to a PA without a...
A complementary metal oxide semiconductor (CMOS) power amplifier (PA) using a wafer-level bondwire spiral inductor with high-quality factor is presented. The inductor is made by three top metal traces connected with bondwire loops above the CMOS chip. The proposed inductor with 2.75-nH inductance achieves a of 18, which is three times as much as that of a conventional CMOS standard spiral inductor...
This paper proposes a 2.4 GHz SiGe HBT differential power amplifier (PA) with a novel on-chip variable gain active predistorter (PD) for linearity enhancement. The fully differential active PD provides an open collector adaptive bias control which can effectively enhance the linearity while improve power added efficiency (PAE). The PA with active PD achieves an output 1-dB compression (OP1dB) of 20...
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