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The superjunction power MOSFET devices, such as p-n column superjunction (named SJ) devices and oxide bypassed (OB) devices, are highly recognized for their higher blocking capability and lower on-state resistance. However, the performance of SJ devices is greatly handicapped due to difficulties in the formation of perfect charge-balanced SJ p-n columns by the current process technology, especially...
Superjunction (SJ) and other concepts have been proposed to overcome ideal silicon MOSFET limit and to lower the on-state resistance without sacrificing the breakdown rating. The gradient oxide-bypassed structure (GOB) is one such novel structure, in which a slanted oxide layer along with a poly contact is used to replace the p-column of conventional superjunction structure. This provides modulation...
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