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A vertical graphene heterostructure field‐effect transistor (VGHFET) using an ultrathin ferroelectric film as a tunnel barrier is developed. The heterostructure is capable of providing new degrees of tunability and functionality via coupling between the ferroelectricity and the tunnel current of the VGHFET, which results in a high‐performance device. The results pave the way for developing novel...
Amorphous black phosphorus (a‐BP) ultrathin films are deposited by pulsed laser deposition. a‐BP field‐effect transistors, exhibiting high carrier mobility and moderate on/off current ratio, are demonstrated. Thickness dependence of the bandgap, mobility, and on/off ratio are observed. These results offer not only a new nanoscale member in the BP family, but also a new opportunity to develop nanoelectronic...
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