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We have experimentally extracted the virtual-source electron injection velocity, vx0, of various III-V HFETs at room temperature. This is the carrier velocity that matters for logic applications of these transistors. Sub-100 nm devices with ??n > 10,000 cm2/V-s exhibit vx0 in excess of 3 ?? 107 cm/s even at VDD = 0.5 V. This is over 2 times that of state-of-the-art Si devices at VDD > 1. We...
High-performance 130 nm E-mode InAs p-HEMTs is fabricated using the Ne-based ALET and the buried Pt gate technology. Results from the combination of the improved gate-to-channel aspect ratio achieved by the buried Pt gate technology show that performance of the device is remarkable and the improved carrier transport property is achieved using the ALET technology.
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