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Recently it was demonstrated that an asymmetric DRAM capacitor stack can introduce non-volatility and at the same time outperform ferroelectric HfO2 based FeRAM in terms of cycle endurance. With the present work, we provide an in-depth study of the underlying mechanisms and perform a comprehensive retention study that characterizes ferroelectric memories. Piezoelectric force microscopy is applied...
The discovery of ferroelectricity in HfO2 and ZrO2 based dielectrics enabled the introduction of these materials in highly scalable non-volatile memory devices. Typical memory cells are using a capacitor or a transistor as the storage device. These scaled devices are sensitive to the local structure of the storage material, here the granularity of the dielectric doped HfO2 layer, varying the local...
Recent discovery of ferroelectricity in HfO2 thin films paved the way for demonstration of ultra-scaled 28 nm Ferroelectric FETs (FeFET) as non-volatile memory (NVM) cells [1]. However, such small devices are inevitably sensible to the granularity of the polycrystalline gate oxide film. Here we report for the first time the evidence of single ferroelectric (FE) domain switching in such scaled devices...
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