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InAs self-organized nanostructures in In 0.52 Al 0.48 As matrix have been grown on InP (001) substrates by molecular beam epitaxy. The morphologies of the nanostructures are found to be strongly dependent on the growth rate of the InAs layer. By increasing the growth rate from 0.005 to 0.35ML/s, the morphology of the nanostructure changes from wire to...
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