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In this study, SixTe1−x-based selector devices with outstanding performance were fabricated by standard CMOS technology. The ovonic threshold switching characteristics and the apparent threshold voltage $$\left( {{V_{{\text{th}}}}} \right)$$ Vth were observed in I–V curves. The increase of Si content directly induced the decrease of leakage current of the W/SixTe1−x/W devices. It was found that the...
In this study, we report a self-selective (nonlinear) resistive switching memory cell, with high on-state half-bias nonlinearity of ~ 650, sub-μA operating current, and high On/Off ratios above 100×. Regarding the cell structure, a thermal oxidized HfOx layer in combination with a sputtered Ta2O5 layer was configured as an active stack, with Pt and Hf as top and bottom electrodes, respectively. The...
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