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The paper presents the process design, simulation and characterization of a silicon-on-insulator (SOI)-based dual-gate metal oxide field-effect transistor (DG MOSFET) with Al metal gate. The proposed structure is an N-channel device, using aluminum nitride (AlN) as gate dielectric. The fully depleted SOI-based DG ISFET compatible with the complementary metal-oxide-semiconductor (CMOS) process is considered...
This paper reports the fabrication of n-type MOSFET using Si3N4 as dielectric on the same wafer as ISFET for ISFET characterization. The paper presents the fabrication, simulation and characterization of metal-oxide field-effect transistor (MOSFET). The gate of the ISFET is stacked with Si3N4 sensing membrane layer that has been deposited using LPCVD system to cover the gate area. Output and transfer...
Ion-Sensitive Field-Effect Transistor (ISFET) is a popular potentiometric chemical/bio-chemical sensor. However, due to charge screening, the sensitivity of the device is significantly reduced. A logarithmic dependence is exhibited between the charge present at the electrolyte-insulator interface and the charge mirrored in the conducting channel, which limits the sensitivity of an ideal conventional...
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