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We have studied growth of self-assembled CdTe quantum dots (QDs) grown on various thicknesses of ZnTe buffer layer by using molecular beam epitaxy (MBE) and atomic layer epitaxy (ALE). The excitonic peak corresponding to the interband transitions from the ground electronic subband to the ground heavy-hole band (E 1 −HH 1 ) in the CdTe/ZnTe QDs shifted to a lower energy with increasing...
We have studied structural and optical properties of self-assembled Cd 0.6 Zn 0.4 Te/ZnTe quantum dots (QDs) grown on Si(100) substrates by using molecular beam epitaxy. X-ray diffraction patterns indicated that the ZnTe buffer layers grown on the Si substrates were hetero-epitaxial films with the (100) orientation. The atomic force microscopy images showed that Cd 0.6 Zn ...
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