The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Metal-insulator transition (MIT) induced by the electric field has been intensively investigated owing to its potential for nano-sized resistance switching devices in the next generation as well as its simple device structure. Although the MIT has been reported in various oxides such as Mn oxide1), Gd oxide2), and Co-doped Ti oxide3), the microscopic origin of the phase transition is still controversial...
Resistive switching device consisting of metallic oxide layer sandwiched by the metallic electrodes has paid considerable attention to next-generation nano-electronic devices. Two major mechanisms; filament-type and interface-type, are known for the transition between the low-resistive and high-resistive states. In both mechanism, the low voltage operation is the common issue for the reliable and...
Generation of large spin current is an important issue in the operation of spintronic devices because the spin current plays a key role in spin-dependent transports and spin-transfer switching. Recently, a heat flow across a ferromagnet (FM) / nonmagnet (NM) junction is found to be able to generate and propagate the spin current. We have found that the large spin current is efficiently produced by...
Currently, some surface acoustic wave (SAW) devices, especially duplexers, are required to have a good temperature coefficient of frequency (TCF), because the bands between a transmission band (Tx) and a receiving band (Rx) of the duplexer such as personal communication services (PCS) mobile phone in US is very narrow (about 1%). However, a 36-48degYX-LiTaO3 substrate, which is used for most SAW radio...
We fabricated double interface-treated Josephson junctions with vertically-stacked geometry based on the high temperature superconductor YBCO. The junctions have a superconductor-insulator-superconductor-insulator-superconductor structure. If the intermediate layer is thin enough, the two junctions are coupled inductively through the intermediate layer, and the two junctions switch simultaneously...
We have found that fully silicided (FUSI) gate is a promising technology for the first time not only for breaking the gate stack scaling limitation on low standby power (LSTP) devices but for keeping continuous scaling of high density SRAM (HDSRAM) for 45nm node and beyond. It is shown that FUSI will drastically suppress the fluctuation of threshold voltage (Vth) of fine transistors of HDSRAM. We...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.