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The single-layered FePt films with thickness of 30 nm are deposited directly on Si substrate without underlayer at substrate temperatures of 350 to 590 ??C. As the substrate temperature is 350 ??C, the L10 FePt(111) preferred orientation is presented and tended to in-plane magnetic anisotropy. However, the L10 FePt(001) texture is obtained and exhibited perpendicular magnetic anisotropy as the substrate...
We have grown pseudomorphic single crystal Si/sub 1-x-y/Ge/sub x/C/sub y/ layers on Si (100) substrates by Rapid Thermal Chemical Vapor Deposition with up to 2.5% substitutional carbon. Capacitance-voltage as well as admittance spectroscopy measurements have been used to study the effect of carbon on the valence band offset of compressively strained Si/sub 1-x-y/Ge/sub x/C/sub y//(100) Si heterojunctions...
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