The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We describe the theoretical and experimental studies of GaN/AlGaN based resonant tunnelling diodes, and in particular analyse the effects and typical values of interface roughness, and then discuss the implications of these, realistic material quality parameters on performance of unipolar optoelectronic devices.
Reduction in the dark current and wavelength selective extraction of the photocarriers in a quantum dots in a well structure using resonant tunneling barriers has been demonstrated. The passband of the two resonant tunneling barriers has been designed to extract longwave and midwave peaks respectively. Substantial reduction in the dark currents and increase in the detectivity has been obtained.
Reduction of dark current in DWELL photodetectors using resonant tunneling barriers is presented. At 77 K, the dark current is reduced by a factor of 1000 in positive bias. The peak detectivity is 4 times 109 cm.Hz1/2 W-1 (Vb= -1.1 V, 77 K at lambdapeak = 11 mum).
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.