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We discuss the preparation of an atomically flat solid–liquid interface between solid gallium nitride and liquid gallium using in situ surface X-ray diffraction to probe the interface roughness. For the creation of this interface it is necessary to start the experiment with liquid gallium which first etches into the solid at a temperature of 823K in a nitrogen free ambient. After this rigorous cleaning...
GaCl synthesis reaction during hydride vapor phase epitaxy (HVPE) growth of GaN in horizontal flow reactor has been analyzed using computerized fluid dynamics (CFD) and molecular estimates of the reaction rates. Finite element code FIDAP (commercially available from Fluent Inc.) [Fidap User Manual, Fluent Inc. [1]] has been used to obtain the flow pattern in the GaCl synthesis section of the HVPE...
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