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The influence of the hydrostatic pressure on the radiative intra-configurational 4f→4f transitions of several Yb3+ ions doped dielectrics and semiconductors with different energy gaps and crystal structures is presented. A thorough analysis of ambient pressure spectra and the pressure behavior of the Yb3+ luminescence lines in InP, GaN, LiNbO3, YPO4, GdPO4 and Gd3Ga5O12 allowed to determine the ambient...
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