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We propose a model to explain the formation mechanism of twin grains at the three-grain tri-junction (3GTJ) on the growth interface during directional solidification of multi-crystalline silicon. We also attempt to confirm its validity by comparing with the experimental results. This model is an extension of the previous model for the two-dimensional (2D) nucleation at the grain boundaries (GBs)....
The formation of the twin nucleus is an important phenomenon during the solidification of multi-crystalline silicon. However, the available model by Duffar and Nadri [Scripta Mater. 62(12) (2010) 955] was unable to predict a critical undercooling for twinning that was comparable with the experiments. Through the detailed analysis of the grain structures in the multi-crystalline silicon sheets grown...
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