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The properties of a new class of electromechanical resonators based on GaN are presented. By using the flexural modes of a doubly clamped beam, the two-dimensional electron gas (2-DEG) present at the AlGaN/GaN interface can be modulated by a field effect arising from the GaN buffer piezoelectricity. This leads to active piezoelectric transducers for which we show experimental results with detailed...
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