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A physically based analytical model was developed to predict the performance of the plateau observed in the gate C-V characteristics of strained-Si/SiGe pMOSFET. Experimental results were used to validate this model. The extracted parameters from our model were tOX=20 nm, ND=1×1016 cm−3, tSSi=13.2 nm, consistent with the experimental values. The results show that the simulation results agree with...
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