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A physically-based compact model of organic thin-film transistors suitable for CAD simulators is proposed. It is worked out by means of a newly developed and particularly simple form of the charge-sheet model: the symmetric quadrature of the accumulation charge. The model is based on the variable-range hopping and accounts for both deep and tail states. It is simple, symmetric, accurately accounts...
A unified drain current model of complementary (p- and n-type) organic thin film transistors (OTFTs) is presented. The model is physically based and takes into account the detailed properties of the organic semiconductor through the density of states (DOS). The drain current depends on the geometrical and physical parameters of the transistor, on the applied gate, drain and source voltages, and on...
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