The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Chemical vapor phase etching of SiGe versus Si by HCl was investigated using a single wafer reduced pressure CVD (RPCVD) system. The etch rate of SiGe layer was higher than that of Si and it is increasing with increasing Ge concentration, that means selectivity of etch rate of SiGe to Si is increasing with increasing Ge concentration. The etching process of Si seems to be anisotropic because etching...
Combination of nonselective Si/SiGe growth with selective chemical vapor phase etching of poly-Si/SiGe was investigated with the aim to create epitaxial Si/SiGe in a selective manner. Directly after the nonselective deposition, an HCl vapor phase etching was performed within the same reactor (RPCVD) at different process conditions (HCl partial pressure, etching temperature) to remove the polycrystalline...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.