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X-Ray diffraction of GaSb, GaAs, GaP and AlSb has been measured at various pressures up to 27 GPa and at temperatures down to 90 K by an energy dispersive method using synchrotron radiation. When pressure was released at low temperature, the high-pressure phase was quenched. The quenched phase showed amorphization when temperature was increased at constant pressure below 1 GPa for GaSb, below 5 GPa...
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