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The effect of annealing on silicon doped SiO 2 films was studied by X-ray diffraction, electron spin resonance (ESR) and Fourier transform photoluminescence (FTPL, 30 to 300 K). FTPL was not observed from as-deposited samples but annealed samples showed FTPL at room temperature centred at about 900 nm and also an anomalous variation of the FTPL intensity with temperature. ESR measurements...
The effect of annealing on silicon doped SiO 2 films was studied by X-ray diffraction, electron spin resonance (ESR) and Fourier transform photoluminescence (FTPL, 30 to 300 K). FTPL was not observed from as-deposited samples but annealed samples showed FTPL at room temperature centred at about 900 nm and also an anomalous variation of the FTPL intensity with temperature. ESR measurements...
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