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Enhancement-mode AlGaN/GaN MOSHEMTs have been widely used in power electronic applications thanks to its superior electrical characteristics [1, 2]. Several methods have been proposed to fabricate E-mode AlGaN/GaN HEMTs like gate recess [3], F− doping at the AlGaN barrier layer [4], and p-type GaN cap layer [5]. Nevertheless, the high threshold voltage and high output current is hard to obtain simultaneously...
This study proposes an integrated analog measuring interface IC chip module used for portable personal healthcare electrocardiograph (ECG) system by considering factors of chip size, weight, portability, and fabrication simplicity. An instrumentation amplifier with an active DC suppression feedback, a “driven right leg (DRL)” circuit, and an on-chip active low-pass filter (LPF) are included. The chip...
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