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A wafer‐scale comparison of HEMTs fabricated on as‐grown GaN/Si and HEMTs fabricated in parallel on epitaxial layers from the GaN/Si growth integrated with a diamond substrate are presented. Diamond, which offers the highest room‐temperature thermal conductivity of any bulk material, is being evaluated as a solution for thermal limitations observed in GaN‐based devices. This paper will present electrical...
In this work we present the highest frequency performance reported to date of an AlInN/GaN HEMT with a 2×150 μm configuration. The frequency performance reached was of a measured fT of 107 GHz and an fmax of 89.5 GHz. The device has an IDSS of 1.1 A/mm at a VGS of 0 V, an Imax of 1.3 A/mm at VGS of 1 V, and a gm‐peak of 395 mS/mm. The gate length, LG, was 122 nm and a total barrier thickness, tbar...
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