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The current–voltage (I–V) characteristics of metal-oxide-semiconductor (MOS) structures with hafnium oxide as the gate dielectric film were studied. Sharp shifts from a low-voltage ohmic regime to a tunneling conduction were observed in the high-voltage range. The paper demonstrates that this behavior can be described very well with a double-layer dielectric model. Excellent fittings of the experimental...
This work deals with some fundamental material properties of the hafnia or hafnium oxide and the silicate layer at the Si/HfO 2 interface. It is realized that one of the fundamental features of the HfO 2 film is that its lowest conduction band states are composed mainly by d states instead of s and p states as is in the case for SiO 2 . There is only a very small covalent component...
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