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We have investigated structural properties of Eu doped gallium oxide (Ga2O3) films grown by pulsed laser deposition at different substrate temperature. X-ray rocking curve and Raman spectroscopy measurements prove that the films grown at the substrate temperature above 400°C are of monoclinic β-Ga2O3 structure and the crystalline quality of the films depends on the substrate temperature. X-ray absorption...
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