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In this letter, we present a high performance Ge n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a NiGe Schottky junction source/drain fabricated using phosphorus dopant segregation. Phosphorus atoms were implanted into NiGe and then driven toward the NiGe/p-Ge interface to depin the Fermi level and form a Schottky junction. A high effective barrier height ...
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