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p-type ZnO thin films have been realized by a N–Al codoping method. The influence of homo-buffer layer on film properties was studied in this work. The buffer layer was deposited at a high temperature of 600°C, and the desired codoped film was successively formed at 500°C on the first template layer. The N–Al codoped ZnO film was improved evidently in its crystal quality, optical quality and p-type...
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