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The energy distributions of traps which cause RTS noise using the array test pattern having a large number of n-MOS and p-MOS are investigated. The more traps which cause RTS noise located near the conduction band. The phenomena in p-MOS are almost the same as n-MOS. However, the number of traps in p-MOS is less than that in n-MOS. The tendency of the energy distribution of the traps near the conduction...
We have proposed and developed a test structure for evaluating electrical characteristics variability of a large number of MOSFETs in very short time using very simple circuit structure. The electrical characteristics such as threshold voltage, subthreshold swings S-factors, random telegraph signal noise, and so on, can be measured in over one million MOSFETs. This new test structure circuit and results...
To suppress Random Telegraph Signal (RTS) noise in MOSFETs, it is necessary to understand the phenomena of RTS. We can extract the accurate time constant in RTS noise by measuring a huge number of MOSFETs during a long time. Time constant is useful to obtain the energy level. In this paper, we demonstrated the statistical and accurate measurement method of the time constant of RTS by a sufficient...
We report on stabilization of CMOS power transistors employing a new layout concept. We assume that instability of power transistors is caused by intensified impact ionization at the pinch-off channels, and that the impact ionization is synchronized with acoustic standing waves in the device area if they are designed with conventional layout configurations. In the new layout design, gate fingers are...
A transistor with an orthogonal gate (OG) electrode is proposed to improve dv/dt capability, reduce the gate-to-drain overlap capacitance (Cgd), and improve figure of merit (FOM). The OG has both a horizontal section and a vertical section for MOS gate control. This 30-V device is implemented in a 0.18-mum CMOS-compatible process. Comparing to a conventional extended drain MOSFET transistor with...
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